真空蒸着法で作成したPVDF薄膜の電気伝導

Abstract

Electrical conduction properties of the vaccum-evaporated polyvinylidene fluoride thin films were investigated. The conduction mechanism was discussed in terms of the space-charge limited conduction model with a singl trap level. The trap density was estimated as 5.7×(10)^<15>(cm)^<-3> in the specimen deposited at 35℃ as a substrate temperature Ts. The trap density increased about one order and the carrier mobility decreased from 1.2×(10)^<-10> to 8.6×(10)^<-13>(cm)^2/v・s with increasing the Ts from 35 to 80℃. According to X-ray diffraction analysis, the crystalinity decreased also with increasing the Ts. This suggests that the traps in the deposited PVDF thin film originate from the amorphase part. PVDF molecular arrangiment on a glass substrate was discussed using a polarized FTIR.